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| Power Transistors 2SD2029 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1347 20.00.5 Unit: mm 3.30.2 5.00.3 3.0 6.0 s Features q q q q Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25C) Ratings 160 160 5 20 12 120 3.5 150 -55 to +155 Unit V V V A 26.00.5 10.0 1.5 2.0 4.0 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 20.00.5 2.5 2.00.3 3.00.3 1.00.2 2.70.3 0.60.2 5.450.3 10.90.5 1 2 3 A W C C 1:Base 2:Collector 3:Emitter TOP-3L Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current (TC=25C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = 160V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20mA VCE = 5V, IC = 1A VCE = 5V, IC = 8A VCE = 5V, IC = 8A IC = 8A, IB = 0.8A VCE = 5V, IC = 0.5A, f = 1MHz VCB = 10V, IE = 0, f = 1MHz 20 210 20 60 20 1.8 2.0 V V MHz pF 200 min typ max 50 50 Unit A A Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance *h FE2 Rank classification Q 60 to 120 S 80 to 160 P 100 to 200 Rank hFE2 2.0 1.5 3.0 1 Power Transistors PC -- Ta 200 20 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3.5W) (1) 100 2SD2029 IC -- VCE IB=800mA 20 TC=25C 700mA 600mA 500mA 400mA 300mA 12 200mA VCE=5V IC -- VBE Collector power dissipation PC (W) Collector current IC (A) 150 Collector current IC (A) 16 16 TC=-25C 12 25C 100C 8 100mA 8 50 4 (2) 0 0 20 40 60 80 100 120 140 160 (3) 0 0 2 4 6 8 50mA 4 0 10 12 0 0.4 0.8 1.2 1.6 2.0 2.4 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=10 3 TC=100C 1 0.3 0.1 0.03 0.01 0.003 0.001 0.1 25C -25C 10000 hFE -- IC 1000 VCE=5V 300 100 30 10 3 1 0.3 0.1 0.01 0.03 fT -- IC VCE=5V f=1MHz TC=25C Forward current transfer ratio hFE 1000 300 TC=100C 100 25C 30 10 3 1 0.1 -25C 0.3 1 3 10 30 100 0.3 1 3 10 30 100 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 Area of safe operation (ASO) 100 IE=0 f=1MHz TC=25C 30 ICP Non repetitive pulse TC=25C t=10ms Collector output capacitance Cob (pF) 3000 Collector current IC (A) 10 I C 3 1 0.3 0.1 0.03 100ms DC 1000 300 100 30 10 1 3 10 30 100 0.01 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 2SD2029 Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
Price & Availability of 2SD2029
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